Location and Visualization of Working p-n and/or n-p Junctions by XPS
نویسندگان
چکیده
منابع مشابه
Location and Visualization of Working p-n and/or n-p Junctions by XPS
X-ray photoelectron spectroscopy (XPS) is used to follow some of the electrical properties of a segmented silicon photodetector, fabricated in a p-n-p configuration, during operation under various biasing configurations. Mapping of the binding energy position of Si2p reveals the shift in the position of the junctions with respect to the polarity of the DC bias applied. Use of squared and triang...
متن کاملChemical Visualization of a GaN p-n junction by XPS
We report on an operando XPS investigation of a GaN diode, by recording the Ga2p3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistiv...
متن کاملREACTIVITY OF N-SUBSTITUTED p-BENZO AND p-NAPHTHOQUINONEIMINE N-OXIDES TOWARD DIPOLAROPHILES
The dipolar cycloaddition reactivity of N-(1-naphthy1)-1,4- benzoquinoneimine N-oxide and N-phenyl-1,4- naphthoquinoneimine Noxide are investigated, The latter gives the expected adducts with common dipolarophiles such as acrylonitryle, methyl methacrylate, dimethylacetylene dicarboxylate and N-phenylmaleimide. The reactivity of the former nitrone is found to be minimal. It undergoes, how...
متن کاملModeling of Manufacturing of Field-Effect Heterotransistors without P-n-junctions to Optimize Decreasing their Dimensions
It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increas...
متن کاملCMOS photodiodes based on vertical p-n-p junctions
A device composed of two junctions, but operating as a photodiode is designed and implemented in a pre-production 1 μm complementary-metal-oxide-semiconductor silicon technology foundry service. No process modification is performed. Tests are performed at a wavelength of 783 nm. Rise and fall times in the nanosecond range are reported along with sensitivity and bandwidth measurements. The suita...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Scientific Reports
سال: 2016
ISSN: 2045-2322
DOI: 10.1038/srep32482